RF switch on high resistive substrate

ABSTRACT

A device includes a semiconductor substrate of a first conductivity type, and a deep well region in the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite to the first conductivity type. The device further includes a well region of the first conductivity type over the deep well region. The semiconductor substrate has a top portion overlying the well region, and a bottom portion underlying the deep well region, wherein the top portion and the bottom portion are of the first conductivity type, and have a high resistivity. A gate dielectric is over the semiconductor substrate. A gate electrode is over the gate dielectric. A source region and a drain region extend into the top portion of the semiconductor substrate. The source region, the drain region, the gate dielectric, and the gate electrode form a Radio Frequency (RF) switch.

This application claims the priority of the following provisionallyfiled U.S. patent application: Application Ser. No. 61/780,002, filedMar. 13, 2013, and entitled “RF Switch on High Resistive Substrate,”which application is hereby incorporated herein by reference.

BACKGROUND

In integrated circuit applications, more and more functions areintegrated into products. For example, different functional elementssuch as 3G video elements, WiFi elements, Bluetooth elements, andaudio/video elements may need to be integrated together to form anapplication. A commonly known application for these devices is themobile application, in which mobile devices such as cell phones areformed.

High-frequency circuits, which include Radio Frequency (RF) passivedevices, are widely used in the mobile applications. The RF passivedevices may include capacitors, inductors, transformers, or the like.Due to the high frequency, various design issues were commonly observed.A common problem faced by designers is the signal loss in the substratesthat are underlying the high-frequency circuits, which signal loss ispartially caused by the parasitic capacitance between the high-frequencycircuits and the underlying substrates. Typically, with the increase inthe frequency of the signals, the signal loss becomes more severe. Thissignificantly limits the design of high-frequency circuits.

Currently, there are a couple of solutions for reducing the substrateloss. For example, Silicon-On-Insulator (SOI) substrates were used byvarious groups of people to form the high-frequency circuits. Althoughthe substrate loss may be reduced using this solution, the SOIsubstrates are typically expensive. In addition, the SOI substratessuffer from third harmonic issues, and hence the circuits formedthereon, for example, Complementary Metal-Oxide-Semiconductor (CMOS)devices, are very difficult to be integrated with the RF passivedevices.

In addition, with the high frequency of the signals carried by thehigh-frequency circuits, the control circuits for operating the RFpassive devices need to handle the quick change in the signals, and thecontrol circuits need to have response time short enough to adapt to thechange in the high-frequency signals.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the embodiments, and the advantagesthereof, reference is now made to the following descriptions taken inconjunction with the accompanying drawings, in which:

FIGS. 1 through 8 are cross-sectional views of intermediate stages inthe manufacturing of a Radio Frequency (RF) switch in accordance withsome exemplary embodiments.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments of the disclosure are discussedin detail below. It should be appreciated, however, that the embodimentsprovide many applicable concepts that can be embodied in a wide varietyof specific contexts. The specific embodiments discussed areillustrative, and do not limit the scope of the disclosure.

A Radio-Frequency (RF) switch formed of a Metal-Oxide-Semiconductor(MOS) transistor and the method of forming the same are provided inaccordance with various exemplary embodiments. The intermediate stagesof forming the RF switch are illustrated. The variations of theembodiments are discussed. Throughout the various views and illustrativeembodiments, like reference numbers are used to designate like elements.

Referring to FIG. 1, substrate 20 is provided. Substrate 20 may comprisea semiconductor material such as silicon, although other semiconductormaterials such as silicon germanium may be used. Substrate 20 may belightly doped with a p-type impurity, for example, boron, indium, orcombinations thereof. Substrate 20 has a high resistivity, which ishigher than about 3,000 ohm-cm, or higher than about 5,000 ohm-cm. Theresistivity may also be between about 3,000 ohm-cm and about 250,000ohm-cm, and may be between about 5,000 ohm-cm and about 20,000 ohm-cm.The resistivity of substrate 20 is significantly higher than theresistivity of typical silicon substrates, which may have resistivityvalues close to about 10 ohm-cm. Accordingly, substrate 20 is referredto as a high-resistive substrate hereinafter. The respective p-typedoping concentration may be between about 5×10⁶/cm³ and about 5×10¹⁰/cm³in accordance with some embodiments. The p-type doping concentration ofsubstrate 20 is also significantly lower than the p-type dopingconcentration of typical silicon substrates, which may have p-typedoping concentrations between about 1×10¹²/cm³ and about 1×10¹⁵/cm³.

Also referring to FIG. 1, an n-type implantation is performed to implantan n-type impurity into semiconductor substrate 20. The implantation isshown by arrows 21. As a result, Deep N-Well (DNW) 22 is formed at anintermediate level in substrate 20, with a un-implanted substrateportion 20A overlying DNW 22, and a un-implanted portion of substrate 20underlying DNW 22. The n-type impurity may be selected from phosphorous,arsenic, antimony, or combinations thereof. The implantation energy maybe between about 1,000 KeV and about 2,500 KeV. The dosage of the n-typeimpurity may be between about 1×10¹³/cm² and about 1×10¹⁴/cm². Theresulting doping concentration of DNW 22 may be between about 1×10¹³/cm³and about 1×10¹⁴/cm³.

As shown in FIG. 1, isolation regions 24 are formed to extend from thetop surface of semiconductor substrate 20 into semiconductor substrate20. In some embodiments, isolation regions 24 are Shallow TrenchIsolation (STI) regions. The depth of STI regions 24 may be betweenabout 3,500 Å and about 4,000 Å in some embodiments. In alternativeembodiments, isolation regions 24 are oxide regions formed by localoxidation of substrate 20. Isolation regions 24 may comprise siliconoxide in some embodiments. Isolation regions 24 define a portion ofsubstrate 20 as an active region for forming a Metal-Oxide-Semiconductor(CMOS) transistor.

Referring to FIG. 2, a p-type implantation is performed to implant ap-type impurity into semiconductor substrate 20, and hence p-well region26 is formed. The implantation is shown as arrows 25. In someembodiments, p-well region 26 is over, and may contact, DNW 22. The topsurface of p-well region 26 is lower than the top surface of substrate20. Accordingly, portion 20A of substrate 20 over p-well region 26remains to be un-implanted with the p-type impurity. It is appreciatedthat in the implantations for forming DNW 22 and p-well region 26, theimplanted impurities may have some ions left in substrate portion 20A.Substrate portion 20A, however, is not intentionally implanted, and theions left therein will be a small amount. The p-type impurity introducedby implantation 25 may be selected from indium, boron, or the like. Insome embodiments, indium is implanted, and the implantation energy isbetween about 100 KeV and about 130 KeV. The dosage of the p-typeimpurity may be between about 1×10¹²/cm² and about 1×10¹⁴/cm². Theresulting doping concentration of p-well region 26 may be between about1×10¹¹/cm³ and about 1×10¹⁴/cm³.

In accordance with the embodiments of the present disclosure, the orderfor forming STI regions 24, DNW 22, and p-well region 26 may bedifferent from that are in the illustrated embodiments, and may bechanged to different orders. For example, DNW 22 and p-well region 26may be formed before the formation of STI regions 24. Also, DNW 22 maybe formed after the formation of p-well region 26 in some embodiments.

FIG. 3 illustrates the formation of a gate stack, which includes gatedielectric 30 and gate electrode 32. Gate dielectric 30 may be formed ofa material selected from silicon oxide, silicon nitride, siliconcarbide, silicon oxynitride, combinations thereof, and multi-layersthereof. High-k dielectric materials such as hafnium-based oxides,aluminum-based oxides, lanthanum-based oxides, and combinations thereof,may also be comprised in gate dielectric 30. Gate electrode 32 may beformed of doped polysilicon. Alternatively, metals, metal nitrides,metal silicides, and/or other conductive materials can be used to formgate electrode 32. The formation of gate dielectric 30 and gateelectrode 32 includes forming a blanket gate dielectric layer and ablanket gate electrode layer over the blanket gate dielectric layer, andthen patterning the blanket gate dielectric layer and the blanket gateelectrode layer. In accordance with some embodiments, gate length Lg ofgate electrode 32 is smaller than about 0.3 μm.

In accordance with the embodiments of the present disclosure, no channeldoping is performed. It is appreciated that in the formation ofconventional MOS transistors, channel dopings may be performed toincrease the doping concentrations in the channels of the respective MOStransistors. In the conventional channel doping for forming NMOStransistors, p-type channel doping may be performed through implanting ap-type impurity into the channels of the NMOS transistors. For formingPMOS transistors, n-type channel doping may be performed throughimplanting an n-type impurity into the channels of the PMOS transistors.In the embodiments of the present disclosure, no channel dopingimplantation is performed. This results in the channel dopingconcentration, which is in the channel 29 that is overlapped by gateelectrode 32, to be very low. In accordance with some embodiments,channel region 29 has a p-type doping concentration lower than about10¹³/cm³. The threshold voltage of the resulting transistor is thus low.Hence, the MOS transistors formed in accordance with the embodimentshave very fast switching time, and are suitable for being used as RFswitches.

Referring to FIG. 4, tilt implantations 34 are performed to form LightlyDoped Drain/Source (LDD) regions 36, wherein the tilt implantation aretilted from the opposite sides of gate electrode 32. The implantedimpurity may include an n-type impurity such as phosphorous, arsenic, orcombinations thereof. The tilt implantation may be performed at tiltangle α, which may be smaller than about 15 degrees, for example. Due tothe tilt implantation, LDD regions 36 extend underlying gate dielectric30 and gate electrode 32, with a portion of each of LDD regions 36overlapped by gate dielectric 30 and gate electrode 32. The energy forimplanting the n-type impurity, for example, arsenic, may be betweenabout 2 KeV and about 10 KeV. Hence, LDD regions 36 are very shallow,and depth D1 of LDD regions 36 may be smaller than about 50 nm.

Referring to FIG. 5, gate spacers 38 and heavily doped source and drainregions 40 (referred to as source/drain regions hereinafter) are formed.In accordance with some embodiments, gate spacers 38 are formed first,followed by performing an implantation to form source/drain regions 40.Hence, source/drain regions 40 have inner edges aligned to the outeredges of gate spacers 38. In alternative embodiments, an implantation isperformed to form source/drain regions 40, followed by the formation ofgate spacers 38. Hence, source/drain regions 40 have inner edges alignedto the edges of gate electrode 32. During the formation of source/drainregions 40, an n-type impurity such as arsenic, phosphorous, or thelike, is implanted. In the embodiments wherein arsenic is implanted, theimplantation energy may be between about 2 KeV and about 10 KeV. Hence,source/drain regions 40 are also very shallow, and depth D2 ofsource/drain regions 40 may be smaller than about 50 nm. In someembodiments, depth D1 of LDD regions 36 and depth D2 of source/drainregions 40 are substantially equal to each other. In certainembodiments, a difference between depths D1 and D2 may be smaller thanabout 5 percent, and may be between about 3 percent and about 5 percent.

The bottoms of LDD regions 36 and source/drain regions 40 are spacedapart from the top surface of p-well region 26 by substrate portion 20A.Hence, LDD regions 36 and source/drain regions 40 form junctions withsubstrate portion 20A, which have a very low p-type impurityconcentration.

FIG. 6 illustrates the formation of dielectric layers 42, which areformed to overlap and contact source/drain regions 40. In accordancewith some embodiments, each of dielectric layers 42 is in contact withone of gate spacers 38, and extends away from the respective gatespacers 38. The material of dielectric layers 42 may include oxide,nitride, carbide, oxynitride, and/or the like, and may be formed usingChemical Vapor deposition (CVD) methods such as Plasma Enhanced ChemicalVapor Deposition (PECVD), Atomic Layer Deposition (ALD), or the like.Thickness T1 of dielectric layers 42 may be between about 10 nm andabout 50 nm. The top surface of dielectric layers 42 may be lower thanthe top surface of gate electrode 32 in some embodiments. The formationof dielectric layers 42 may include forming a blanket dielectric layer(not shown), forming a photo resist (not shown) over the blanketdielectric layer and patterning the photo resist, and then etching theblanket dielectric layer to form dielectric layers 42. Hence, dielectriclayers 42, unlike gate spacers 38 that have sloped top surfaces, mayhave some top surfaces that are substantially flat.

Next, referring to FIG. 7, gate silicide 44 and source/drain silicideregions 46 are formed. The formation of gate silicide 44 andsource/drain silicide regions 46 may include forming a metal layer (notshown), which may include nickel, cobalt, or the like, on the structureshown in FIG. 6. An annealing is then performed, during which theexposed silicon reacts with the metal layer to form silicide regions 44and 46. The portions of the metal layer unreacted with the metal layerare removed, leaving gate silicide 44 and source/drain silicide regions46. Due to the formation of dielectric layers 42, source/drain silicideregions 46 are pushed farther away from gate electrode 32, and hence thebreakdown voltage between, for example, gate electrode 32 and drainregion 40 is increased. MOS transistor 100 is thus formed. MOStransistor 100 may be used as an RF switch.

FIG. 8 illustrates the Back End of Line (BEOL) processes, in which gatecontact plug 48, source/drain contact plugs 50, and Inter-LayerDielectric (ILD) 52 are formed. Gate contact plug 48 and source/draincontact plugs 50 are electrically connected to gate electrode 32 andsource/drain regions 40, respectively. Next, interconnect structure 54is formed. Interconnect structure 54 may include a plurality ofdielectric layers 56. In some embodiments, dielectric layers 56 arelow-k dielectric layers having dielectric constants (k values) smallerthan about 3.5, for example. The k values of low-k dielectric layers 56may also be lower than about 3.0. Metal lines 58 and vias 60 are formedin dielectric layers 56. Some metal lines 58 and vias 60 areelectrically coupled to MOS transistor 100. The metal lines in a samelayer are collectively referred to as a metal layer.

As also shown in FIG. 8, RF passive device 62 is formed in the BEOLprocess. RF passive device 62 may be a capacitor, an inductor, atransformer, a transmission line, a waveguide, or the like, whosecharacteristics (such as the frequency response and the Q factor) aresuitable for being operated in RF frequency range (about 500 MHz orhigher). FIG. 8 illustrates the cross-sectional view of a part of RFpassive device 62. In some embodiments, RF passive device 62 extendsinto one or more of the metal layers in interconnect structure 54,wherein thickness T2 of each of the metal layers may be, for example,greater than about 1 μm, and may be between about 1 μm and about 5 μm.Passive device 62 may also extend into an aluminum-containing layer(such as an aluminum copper layer) 64. Through the stacking of theplurality of metal layers and the aluminum-containing layer, thethickness of RF passive device 62 is great enough, and hence RF passivedevice 62 may be operated under high frequencies.

Although the previously discussed embodiments provide a method offorming an RF switch comprising an NMOS device, the teaching provided inthe present disclosure is readily available for the formation of RFswitches comprising PMOS devices, with the conductivity types of therespective substrate, well regions, LDD regions, and/or source/drainregions inverted.

In accordance with the embodiments of the present disclosure, MOStransistor 100 acts as an RF switch, which may be operated by thesignals that are provided by RF passive device 62. Since RF switch 100is formed based on substrate 20 that has a high resistivity, theinsertion loss of the RF switch is very low. Simulation results revealedthat the insertion loss of the RF switch formed in accordance with theembodiments of the present disclosure is about 0.34 dB, which issignificantly lower than the specification requirement (lower than 1dB). Furthermore, the switching time of the RF switch formed inaccordance with the embodiments of the present disclosure is about 60nanoseconds, which is significantly lower than the specificationrequirement (about 500 nanoseconds). Hence, the RF switch formed inaccordance with the embodiments of the present disclosure may meet thespecification requirement with a significant margin.

In accordance with some embodiments, a device includes a semiconductorsubstrate of a first conductivity type, and a deep well region in thesemiconductor substrate, wherein the deep well region is of a secondconductivity type opposite to the first conductivity type. The devicefurther includes a well region of the first conductivity type over thedeep well region. The semiconductor substrate has a top portionoverlying the well region, and a bottom portion underlying the deep wellregion, wherein the top portion and the bottom portion are of the firstconductivity type, and have a high resistivity. A gate dielectric isover the top portion of the semiconductor substrate. A gate electrode isover the gate dielectric. A source region and a drain region extend intothe top portion of the semiconductor substrate, wherein the sourceregion and the drain region are spaced apart from the well region by thetop portion of the semiconductor substrate. The source region, the drainregion, the gate dielectric, and the gate electrode form an RF switchconfigured to operate in a RF frequency range.

In accordance with other embodiments, a device includes a semiconductorsubstrate, a deep n-well region in the semiconductor substrate, and ap-well region over and contacting the deep n-well region. Thesemiconductor substrate includes a top portion overlying the p-wellregion and a bottom portion underlying the deep n-well region. The topportion and the bottom portion are of p-type. The bottom portion has aresistivity greater than about 5,000 ohm-cm. The device further includesan RF switch, which includes a gate dielectric over the top portion ofthe semiconductor substrate, a gate electrode over the gate dielectric,and a source region and a drain region extending into the top portion ofthe semiconductor substrate. The source region and the drain region arespaced apart from the p-well region by the top portion of thesemiconductor substrate. An RF passive device is overlying andelectrically coupled to the RF switch.

In accordance with yet other embodiments, a method includes performing afirst implantation to implant a semiconductor substrate to form a deepwell region, wherein the semiconductor substrate is of a firstconductivity type, and has a resistivity higher than about 5,000 ohm-cm.In the first implantation, an impurity of a second conductivity typeopposite to the first conductivity type is implanted. A secondimplantation is performed to implant the semiconductor substrate,wherein a well region of the first conductivity type is formed over thedeep well region. After the first and the second implantations, thesemiconductor substrate includes a top portion overlying the well regionand a bottom portion underlying the deep well region, wherein the topportion and the bottom portion are substantially un-implanted in thefirst and the second implantations. The method further includes forminga gate dielectric over the top portion of the semiconductor substrate,forming a gate electrode over the gate dielectric, and performing athird implantation to implant the top portion of the semiconductorsubstrate to form a source region and a drain region. The source regionand the drain region are spaced apart from the well region by aremaining top portion of the semiconductor substrate. The source region,the drain region, the gate dielectric, and the gate electrode form an RFswitch configured to operate in a RF frequency range.

Although the embodiments and their advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the embodiments as defined by the appended claims. Moreover,the scope of the present application is not intended to be limited tothe particular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed, that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the disclosure.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps. In addition, each claim constitutes a separateembodiment, and the combination of various claims and embodiments arewithin the scope of the disclosure.

What is claimed is:
 1. A device comprising: a semiconductor substrate ofa first conductivity type; a deep well region in the semiconductorsubstrate, wherein the deep well region is of a second conductivity typeopposite to the first conductivity type; a well region of the firstconductivity type over the deep well region, wherein the semiconductorsubstrate comprises: a top portion overlying the well region; and abottom portion underlying the deep well region, wherein the top portionand the bottom portion are of the first conductivity type, and have ahigh resistivity; a gate dielectric over the top portion of thesemiconductor substrate; a gate electrode over the gate dielectric; agate spacer on a sidewall of the gate electrode; a source region and adrain region extending into the top portion of the semiconductorsubstrate, wherein the source region and the drain region are spacedapart from the well region by the top portion of the semiconductorsubstrate, and wherein the source region, the drain region, the gatedielectric, and the gate electrode form a Radio Frequency (RF) switchconfigured to operate in a RF frequency range; and a dielectric layercomprising a portion over and contacting one of the source region andthe drain region, wherein the dielectric layer comprises a first edgecontacting a second edge of the gate spacer, with the first edgeextending to contact a top surface of the one of the source region andthe drain region.
 2. The device of claim 1 further comprising: an RFpassive device overlying and electrically coupled to the RF switch,wherein the gate electrode is serially and directly connected to an endof the RF passive device, wherein the RF passive device is selected fromthe group consisting essentially of a capacitor, an inductor, atransformer, a transmission line, a waveguide, and combinations thereof.3. The device of claim 1, wherein the high resistivity of thesemiconductor substrate is higher than about 5,000 ohm-cm.
 4. The deviceof claim 1, wherein the high resistivity is between about 5,000 ohm-cmand about 20,000 ohm-cm.
 5. The device of claim 1, wherein the sourceregion and the drain region have a depth smaller than about 50 nm. 6.The device of claim 1 further comprising: a source/drain silicide havingan edge aligned to an edge of the dielectric layer, wherein thedielectric layer is between the gate spacer and the source/drainsilicide, wherein the dielectric layer comprises a substantially flattop surface extending from the source/drain silicide to the gate spacer.7. The device of claim 1 further comprising a lightly doped drain/sourceregion extending underlying the gate dielectric, wherein the lightlydoped drain/source region has a depth smaller than about 50 nm.
 8. Adevice comprising: a semiconductor substrate; a deep n-well region inthe semiconductor substrate; a p-well region over and contacting thedeep n-well region, wherein the semiconductor substrate comprises: a topportion overlying the p-well region; and a bottom portion underlying thedeep n-well region, wherein the top portion and the bottom portion areof p-type, and wherein both the top portion and the bottom portion havea resistivity greater than about 5,000 ohm-cm; a Radio Frequency (RF)switch comprising: a gate dielectric over the top portion of thesemiconductor substrate; a gate electrode over the gate dielectric; anda source region and a drain region extending into the top portion of thesemiconductor substrate, wherein the source region and the drain regionare spaced apart from the p-well region by the top portion of thesemiconductor substrate; and an RF passive device overlying andelectrically coupled to the RF switch.
 9. The device of claim 8, whereinthe RF passive device is directly connected to the gate electrode, andthe RF passive device is selected from the group consisting essentiallyof a capacitor, an inductor, a transformer, a transmission line, awaveguide, and combinations thereof.
 10. The device of claim 8, whereinthe top portion of the semiconductor substrate that separates the sourceregion and the drain region from the p-well region has a resistivitybetween about 5,000 ohm-cm and about 20,000 ohm-cm.
 11. The device ofclaim 8 further comprising: a gate spacer on a sidewall of the gateelectrode; a dielectric layer comprising a portion over and contactingone of the source region and the drain region, wherein the dielectriclayer comprises a first edge contacting a second edge of the gatespacer, with the first edge extending to a top surface of the one of thesource region and the drain region; and a source/drain silicide havingan edge aligned to an edge of the dielectric layer.
 12. The device ofclaim 8, wherein the RF passive device is selected from the groupconsisting essentially of a capacitor, an inductor, a transformer, atransmission line, a waveguide, and combinations thereof.
 13. The deviceof claim 8, wherein the resistivity of the bottom portion of thesemiconductor substrate is between about 5,000 ohm-cm and about 20,000ohm-cm.
 14. The device of claim 8 further comprising a Shallow TrenchIsolation (STI) region extending into the semiconductor substrate,wherein the STI region has a first depth, and wherein the source regionand the drain region have second depths smaller than about 5 percent thefirst depth.
 15. A device comprising: a semiconductor substrate; a wellregion in the semiconductor substrate; a gate stack overlapping a topportion of the semiconductor substrate spacing the gate stack apart fromthe well region, with the top portion of the semiconductor substratehaving a resistivity higher than about 5,000 ohm-cm; a gate spacer on asidewall of the gate stack; a source/drain region on a side of the gatestack, wherein an edge of the source/drain region is aligned to an outeredge of the gate spacer; a silicide region over and contacting thesource/drain region; and a dielectric layer overlapping and in physicalcontact with the source/drain region, wherein the dielectric layercomprises an outer edge aligned to an inner edge of the silicide region,and an inner edge contacting the outer edge of the gate spacer.
 16. Thedevice of claim 15, wherein the dielectric layer has a flat top surface,and both the inner edge and the outer edge extend to contact thesource/drain region.
 17. The device of claim 15, wherein the dielectriclayer is in physical contact with the silicide region and the gatespacer, and the dielectric layer comprises a substantially flat topsurface extending from the silicide region to the gate spacer.
 18. Thedevice of claim 15 further comprising a deep well region in thesemiconductor substrate, with the deep well region being of aconductivity type opposite to a conductivity type of the well region,wherein a top surface of deep well region is in contact with a bottomsurface of the well region.
 19. The device of claim 15, wherein theresistivity is between about 5,000 ohm-cm and about 20,000 ohm-cm. 20.The device of claim 15 further comprising a Radio Frequency (RF) passivedevice overlying, wherein the gate stack is connected to an end of theRF passive device.